Advanced Maskless Aligner
Features
Diode Laser Sources: 405nm (8 W) and 375nm (2.8 W)
Resolution:
- Minimum feature size: 600nm
- Minimum lines and spaces: 800nm
- Global alignment accuracy: 500nm
- Backside alignment: 1000nm
Other features:
- Write Speed: Up to 285mm²/min (4-inch wafer in 35 min)
- Substrate Sizes: From 5 × 5mm² to 6-inch wafers
- Maximum write area: 150 x 150mm²
- Size detection: automatic
- Automatic substrate labeling
- Alignment mode: front and back-size, automatic or manual
- Substrate Thickness: 0.1–12mm
- Exposure Area: 150 × 150mm²
- Real-time autofocus with a 180µm range
- Conversion software for DXF, CIF, GDSII and Gerber file formats
- CADless Draw Mode: Direct drawing capability
UV Resists available (more resists upon request):
|
Positive |
AZ5214E, AZ-P4903, OFPR800 (12 or 30 Cp), MaP1275HV, S1813, S1818 |
|
Negative |
AZ5214E, NR9-3000PY, NR9G-3000PY |