Electron Beam Lithography
Features
- Electron Gun: Thermal field emitter
- Acceleration Voltage: fixed at 100 kV
- Beam Current Range: 0pA to 100nA
- Minimum Beam diameter: 1.8 nm
- Minimum line width: 6nm
- Beam Positioning Resolution: 0.1 nm/dot
- Field stitching accuracy: ±10nm
- Overlay accuracy: ±10nm
- Scan Clock: up to 100MHz (10ns)
- Writing Field Size: 100µm, 250µm, 500µm and 1000µm
- Exposure area: 210 x 210mm
- Sample size: 5x5mm up to 6-inch wafers.
- 3 holders available depending on sample size
- Optical pre-alignment station
Software:
- BEAMER and TRACER for pattern design, data conversion, and dose control (proximity effect correction)
- ELMS for job schedule and design preparation
Python scripting supported
Common design format GDSII or DXF
Electron beam resists available (More on request):
|
Positive |
PMMA 950k A4, MMA, CSAR 62 (AR-P 6200) |
|
Negative |
AR-N 7511 |