Deep Reactive Ion Etching (RIE)
This system uses inductively coupled plasma (ICP) source to achieve high-density plasma, enabling deep etching of silicon. It employs the Bosch process, alternating between etching with SF₆ and polymer deposition with C₄F₈ to create deep, high-aspect-ratio features with minimal sidewall roughness. it ideal for applications like MEMS fabrication, TSV etching, and micro-optical components.
Inventory ID:
ENG-N056
Manufacturer:
Samco
Model:
RIE-400iPB
Year Installed:
2025
Categories
Section
Room Number:
L5-D46
Open to External Use?:
Yes
Operation:
User/Staff Operated
Share on:
Features
- RF power source: up to 1500W at 13.56 MHz with Automatic matching
- Temperature Control: Electrostatic chuck with helium backside cooling
- Process pressure: 1 to 100mTorr
- Process Gases: SF₆, C₄F₈, O₂, Ar
- Sample size: from 5x5mm to 4-inch wafer
- Selectivity: Greater than 100:1 (SiO2 mask)
- Load lock for sample introduction
