Reactive Ion Etching (RIE)

The Samco RIE-200NL is a dry etching system optimized for silicon-based materials like silicon dioxide (SiO), silicon nitride (SiN), or other nitride and oxide and some metals.

cleanroom tech with sample chamber for wafers and control touchscreen

This system uses capacitive plate (CCP) reactive ion etching with RF power to create controlled plasma environments for precise etching.

The built-in HORIBA LEM interferometric endpoint monitor helps detect etch completion in real-time by measuring changes in reflected light intensity—this ensures consistent results even with thin films or multilayer stacks.

Reservations & Training
Inventory ID:
ENG-N059
Manufacturer:
Samco
Model:
RIE-200NL
Year Installed:
2025
Section
Engineering
Room Number:
L5-D46
Open to External Use?:
Yes
Operation:
User/Staff Operated
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Features

  • RF power source: up to 600W at 13.56 MHz with Automatic matching
  • Electrode temperature range: 5°C to 50°C (Chiller controlled)
  • Process pressure: 1 to 100mTorr
  • Process Gases: Ar, N2, O2, SF6, CHF₃
  • Sample size: from 5x5mm to 4-inch wafer
  • Load lock for sample introduction
  • Endpoint Detection – HORIBA LEM CT Camera:
  • Laser interferometry (non-contact, in situ monitoring)
  • Laser Wavelength Options: 670 nm
  • Spot Size: ~50 µm
  • CCD Imaging: Live image for aligning and monitoring the beam spot
  • Output: Interferometric signal for endpoint and depth tracking

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