Plasma-Enhanced Chemical Vapor Deposition (PECVD)

The Samco PD-200NL is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) system optimized for high-quality films deposition of silicon dioxide (SiO), silicon nitride (SiN) and amorphous silicon.

cleanroom tech with wafer sample positioner and touchscreen PC controls

The system uses a capacitive coupling plate (CCP) with RF power to generate a controlled plasma environment, ensuring precise deposition. It offers excellent film uniformity, stress control, and process stability, making it ideal for a wide range of applications in microelectronics and photonics.

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Features

  • RF power source: up to 300W at 13.56 MHz with Automatic matching
  • Temperature Range: up to 400°C
  • Process pressure: 1 to 100mTorr
  • Process Gases: Ar, N2, SiH₄, N₂O, NH₃, CF₄
  • Deposition rate >100nm/min
  • Max thickness per run: 4µm
  • Sample size: from 5x5mm to 4-inch wafer
  • Load lock for sample introduction