Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Features
- RF power source: up to 300W at 13.56 MHz with Automatic matching
- Temperature Range: up to 400°C
- Process pressure: 1 to 100mTorr
- Process Gases: Ar, N2, SiH₄, N₂O, NH₃, CF₄
- Deposition rate >100nm/min
- Max thickness per run: 4µm
- Sample size: from 5x5mm to 4-inch wafer
- Load lock for sample introduction