SCVS Oxidation Furnace
The SVCS Oxidation Furnace is a standalone system designed for advanced thermal processing in R&D and pilot fabs. Capable of diffusion applications, it supports a wide range of semiconductor and materials processes including wet/dry oxidation.
The system offers high precision with one temperature zone and uniformity within ±0.5 °C across a 12 flat zone, reaching process temperatures up to 1300 °C. Its modular control architecture and small footprint make it ideal for flexible lab environments.
Equipped with 4 gas lines (Support up to 8 gas lines and two liquid sources).
Designed for reliability and ease of use, it provides a safe, energy-efficient platform for oxidation, doping, and annealing processes.
Features
Key Features
- Ideal for R&D labs and pilot fabs
- Compact footprint – standalone configuration
- Low power consumption and easy maintenance
- Heating element: 1 temperature zone (upgradeable to 3 zones)
- Max temperature: up to 1300 °C
- Flat zone uniformity: ±0.5 °C
- Modular control system with independent hardware interlocks
- 4 gas lines
Atmospheric Processes
- Diffusion and drive-in at high temperature.
- Doping from solid sources is possible with a system upgrade.
- Suitable for annealing, curing, and sintering.
- Supports Pyrogenic Wet Oxide with External Burning System, Wet Oxide with ultrapure steamer, and Dry Oxide (High Pressure Oxide).
Technical Data
| Parameter | Specification |
|---|---|
| Sample size | 2″–4″ (50–100 mm) and pieces |
| Wafer load | Up to 5 wafers per batch |
| Heating zones | 1 (upgradeable to 3) |
| Flat zone | Up to 200 mm |
| Temperature range | 200 °C – 1300 °C |
| Uniformity | ±0.5 °C across flat zone |