Plasma Enhanced Atomic Layer Deposition (PE-ALD)
The system uses an inductively coupled plasma (ICP) source to generate a stable and uniform plasma, allowing for film growth at lower temperatures compared to conventional thermal ALD. This makes it particularly suitable for high-throughput applications with sensitive substrates. It can also be used as a traditional thermal deposition.
It offers excellent film uniformity, stress control, and process stability, making it ideal for a wide range of applications.
Features
Deposition Materials: Oxides (Al₂O₃, SiO₂, TiO₂), Nitrides (AlN, Si3N4, TiN), more on request
Thermal and Plasma-ALD
ICP power source: up to 300W at 13.56 MHz with Automatic matching
Electrode Temperature Range: up to 500°C
Process Gases: Ar, N2, O₂, H2, SF6
Carrier gas: Ar
Sample size: from 5x5mm to 6-inch wafer
Load lock for sample introduction
