Maskless Lithography

The maskless lithography uses a laser beam to precisely expose a resist-coated substrate thought a mirror array, creating intricate patterns at the micrometer scale.

ENG-N30 maskless lithography DL-1000

This system (DL-1000) utilizes a telecentric optics illumination system and a digital micromirror device (DMD) to perform immediate exposure onto photoresist. Unlike traditional photolithography, which relies on masks to define patterns, maskless lithography systems directly write patterns onto a substrate using a digital mask, bringing flexibility and faster prototyping. A camera allows easy and accurate overlay alignment.

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Features

High Speed patterning speed > 2000mm2/min Laser Wavelength: 405nm (h- line) Laser power: 300mW/cm2 1µm resolution (resist and substrate dependent) Stitching and overlay accuracy: +/-1µm Automatic and manual alignment Write field size (shot): 1024 x 768µm Sample size: from 5x5mm to 4-inch wafer Files supported GDSII or DXF (with data conversion) UV Resists available: - AZ5214E (Japanese) - OFPR300 (12 or 30Cp) - AR-P

- MaP1275HV - mr-DWL - S1813 - SU8-2000 series More resists available on request.