Mask Aligner

The mask aligner MA6 uses UV light to transfer patterns from a mask to a substrate coated with photoresist. It enables precise alignment and exposure, crucial for creating intricate patterns in microelectronics with high throughput and repeatability.

ENG-N31 mask-aligner suss microtech

This system is a mask aligner used for contact and proximity exposure processes. The system is motorized for contact/proximity, microscope objective movement and exposure, with a computer used to display the microscope image for regular and backside alignment overlay. Exposures can be performed with gaps programmable from 10 um to 300 um in 1 um increments. Automatic wedge error compensation (WEC) is used to ensure that the mask and wafer are parallel. The lamp is a 350 W Hg-Arc lamp, providing significant power in the g-h-i-line regime. Integrated light level sensing ensures proper exposure doses as the lamp degrades.

Share on:

Features

Semi-automatic system Exposure mode: proximity, soft, hard, and vacuum contact Wavelength: 350 - 450nm (350W Hg arc lamp), broadband exposure Power calibrated around 12.0mW/cm2 I-line 365 nm and G-line 436 nm band-pass filter available

Vacuum Contact: <1 µm Hard Contact: <1.5 µm Soft Contact: <2.5 µm Proximity (@ 20 µm): <3.0µm Top side alignment accuracy: +/-0.5µm Bottom side alignment accuracy: +/-1.0um Sample size: from 5x5mm to 4-inch wafer Mask size: from 3-inch to 6-inch UV Resists available: - AZ5214E (Japanese) - OFPR300 (12 or 30Cp) - AZ-P4903 - MaP1275HV - mr-DWL - S1813 - SU8-2000 series More resists available on request.