Sputtering 1
Sputtering is a physical vapor deposition technique where a target material is bombarded by generally inert ions (Argon) in a plasma, causing atoms to be ejected and deposited onto a substrate, creating thin films with precise control over thickness and composition. The deposition process is deposition up. There are four sputter cathodes at the bottom of the deposition chamber and a substrate heating and rotating stage are installed at the top flange of the deposition chamber. Multi-Target Deposition: Some systems allow for deposition from multiple targets, enabling the creation of complex multi-layered thin films.
Features
RF Power 300W at 13.56MHz Process gases: Ar, O2, N2 Deposition pressure: 0.1 to 0.5Pa Substrate size up to 4-inch Substrate heating temperature: 300°C Stage rotation speed: 0 – 20rpm (+/-1rpm) In-situ configuration: 4 targets of 2-inch Available targets: - Oxide: § ITO (Indium tin oxide)
§ TiO2 (Titanium oxide) § SnO2 (Tin oxide) § SiO2 (Silicon dioxide) § NiO (Nickel oxide) § ZnO (Zinc oxide) § Cu2O (Copper(I) oxide) - Metals: § Al (Aluminum) § W (Tungsten) § W-Ti (Tungsten-titanium) § V (Vanadium) § Pd (Palladium) § Ta (Tantalum) § Nb (Niobium) § Cr (Chromium) § Cu (Copper) - Other § Cu2S (Copper sulfide) § Si3N4 (Silicon nitride) § Ta-W-Si § ZnO-SiO2 For additional target, contact nanofab team.
