Atomic Layer Deposition

Atomic Layer Deposition (ALD) is a conformal thin film deposition method based on the sequential and self-limiting surface reactions in a gas phase chemical process. Two or more chemicals called precursors, each containing different elements of the materials being deposited, are introduced to the substrate surface separately, one at a time. Each precursor saturates the surface forming a monolayer of material. Multi-cycle is performed to control the film thickness.